2SC3979

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3979 DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation APPLICATIONS ・For high breakdown voltage high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 3 5 1 40 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=0.8A ;IB=0.16A IC=0.8A; IB=0.16A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=0.8A ; VCE=5V IC=0.15A ; VCE=5V 8 6 10 MIN 800 TYP. 2SC3979 MAX UNIT V 1.5 1.5 50 50 V V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.8A ;IB1=0.16A IB2=-0.32A VCC=250V 0.7 2.5 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3979 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3979 4