2SC3981

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching · APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO IC Emitter-Base Voltage 7 V Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @Ta=25℃ 3 A 3 W PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 80 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3981 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V μA μA Collector Cutoff Current VCB= 900V; IE= 0 VEB= 7V; IC= 0 50 Emitter Cutoff Current 50 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 3A; VCE= 5V 6 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V; f= 1MHz 15 MHz Switching Times μs μs μs ton ts tf Turn-on Time IC= 3A; IB1= 0.6A; IB2= -1.2A; VCC= 250V 0.7 Storage Time 2.5 Fall Time 0.3 isc Website：www.iscsemi.cn