2SC4004

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・ Wide area of safe operation (ASO) ・High-speed switching ・High collector to base voltage VCBO APPLICATIONS ・For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 1 2 0.3 30 w UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4004 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA , IB=0 IC=0.2A ;IB=0.04A IC=0.2A; IB=0.04A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.05A ; VCE=5V IC=0.5A ; VCE=5V IC=0.05A; VCE=10V;f=1MHz 6 3 4 MHz MIN 800 1.5 1.0 50 50 TYP. MAX UNIT V V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V 1.0 3.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4004 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3