2SC4007

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 6 A 40 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A B 2SC4007 MIN 100 80 6 TYP. MAX UNIT V V V 1.0 1.5 10 10 100 10 60 500 V V μA μA IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 6V; IC= 0 IC= 1A ; VCE= 4V IE= -0.2A ; VCE= 12V IE=0 ; VCB= 10V; ftest= 1MHz MHz pF hFE classifications E 100-200 F 160-320 G 250-500 isc Website：www.iscsemi.cn 2