2SC4020

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=900V(Min) ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4020 · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 6 1.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ; IB=0 IC=0.7A; IB=0.14A IC=0.7A; IB=0.14A VCB=800V ;IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=-0.3A ; VCE=12V f=1MHz ; VCB=10V 10 6 40 MIN 800 2SC4020 TYP. MAX UNIT V 0.5 1.2 100 100 30 V V μA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=250V; IC=0.7A IB1=0.1A;IB2=-0.35A; RL=357Ω 1.0 5.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4020 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3