2SC4052

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4052 DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 3 6 1 2 25 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=1.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.3A ; VCE=10V 10 5 20 CONDITIONS IC=0.1A ;IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A MIN 450 TYP. 2SC4052 MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.5A;IB1=0.3A IB2=0.6A ,RL=100Ω VBB2=4V 0.5 2.0 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4052 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3