2SC4056

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 8 16 4 8 45 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.77 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4056 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT ton ts tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time Storage time Fall time IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5Ω VBB2=4V At rated volatge IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 20 0.5 2.0 0.2 MHz μs μs μs 0.1 mA 0.1 mA CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A MIN 450 1.0 1.5 TYP. MAX UNIT V V V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4056 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3