2SC4075

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4075 DESCRIPTION ·With TO-220F package ·High voltage ·Wide area of safe operation APPLICATIONS ·Color TV chroma output ,sound output and B/W TV video output ,audio output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.2 0.7 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4075 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 IC=10μA; IE=0 IE=10μA ; IC=0 300 V V(BR)CBO Collector-base breakdown voltage 300 V V(BR)EBO Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V μA μA ICBO Collector cut-off current VCB=200V; IE=0 0.1 IEBO Emitter cut-off current VEB=5V; IC=0 0.1 hFE DC current gain IC=10mA ; VCE=10V 40 200 fT Transition frequency IC=10mA ; VCE=30V 50 MHz COB Output capacitance IE=0; VCB=50V;f=1MHz 5.3 pF hFE Classifications C 40-80 D 60-120 E 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4075 Fig.2 Outline dimensions 3