2SC4107

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 3.5 1.75 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IC=10mA ; VCE=5V IC=1.2A ; VCE=10V f=1MHz ; VCB=10V 15 10 10 20 120 MIN 400 500 7 TYP. 2SC4107 MAX UNIT V V V 0.8 1.5 10 10 50 V V μA μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A;IB1=1.4A; IB2=-2.8A;RL=28.6Ω VCC=200V 0.5 2.5 0.3 μs μs μs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4107 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 4