2SC4110

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ VALUE 500 400 7 25 40 8 160 UNIT V V V A A A PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range 2.5 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1mA; IE= 0 IC= 10mA; RBE= ∞ IE= 1m A; IC= 0 IC= 16A; IB= 3.2A IC= 16A; IB= 3.2A VCB= 400V ; IE= 0 VEB= 5V; IC= 0 IC= 3.2A ; VCE= 5V IC= 16A ; VCE= 5V IC= 10mA ; VCE= 5V IC= 3.2A ; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz 15 10 10 MIN 500 400 7 2SC4110 TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V μA μA 20 300 MHz pF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 20A, IB1= 4A; IB2= -8A RL= 10Ω; VCC= 200V 0.5 2.5 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Website：www.iscsemi.cn 2