2SC4125

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 25 A 3 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 70 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4125 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 4 6 VECF C-E Diode Forward Voltage IF= 10A 2.0 V Switching Times ts Storage Time IC= 6A, IB1= 1.2A; IB2= -2.4A 3.0 μs tf Fall Time 0.1 0.2 μs isc Website：www.iscsemi.cn 2