2SC4131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 4 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4131 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V μA μA Collector Cutoff Current VCB= 100V ; IE= 0 VEB= 15V ; IC= 0 10 Emitter Cutoff Current 10 hFE DC current gain IC= 5A ; VCE= 1V 60 360 fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 18 MHz COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz 210 pF Switching times μs μs μs ton tstg tf Turn-on Time IC= 5A , IB1= 80mA; IB2= -80mA RL= 4Ω; VCC= 20V 0.5 Storage Time 2.0 Fall Time 0.4 isc Website：www.iscsemi.cn 2