2SC4139

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 15 30 5 120 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE=4V IE=-1.5A ; VCE=12V f=1MHz ; VCB=10V 10 10 85 MIN 400 0.5 1.3 100 100 30 MHz pF TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=8A;IB1=0.8A; IB2=-1.6A;RL=25Ω VCC=200V 1.0 3.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4139 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4139 4