2SC4153

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION ・With TO-220F package ・Switching transistor APPLICATIONS ・For humidifier ,DC-DC converter and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 120 8 7 14 3 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A IC=3A; IB=0.3A VCB=200V; IE=0 VEB=8V; IC=0 IC=0.6A ; VCE=4V IC=3A ; VCE=4V IE=-0.5A ; VCE=12V f=1MHz;VCB=10V 70 70 MIN 120 2SC4153 TYP. MAX UNIT V 0.5 1.2 0.1 0.1 250 220 30 110 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=3A IB1=0.3A ,IB2=-0.6A VCC=50V, RL=16.7Ω 0.5 3.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4153 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4153 4