2SC4160

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4160 DESCRIPTION ・With TO-220F package ・High breakdown voltage. ・High reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・400V/4A switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 4 8 1.5 25 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IC=10mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.4A ; VCE=10V 15 10 10 50 20 MIN 400 500 7 TYP. 2SC4160 MAX UNIT V V V 0.8 1.5 10 10 50 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; IB1=0.6A IB2=-1.2A VCC=200V ,RL=66.6Ω 0.5 2.5 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4160 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4160 4