2SC4162

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4162 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 20 A PC 35 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEX(SUS) V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; IE= 0 IC= 5mA; RBE= ∞ IC= 4.5A; IB1= 0.45A, IB2= -1.8A, L= 500μH, clamped IE= 1mA; IC= 0 IC= 6A; IB= 1.6A B 2SC4162 MIN 500 400 400 7 TYP. MAX UNIT V V V V 0.8 1.5 10 10 15 10 10 120 20 50 V V μA μA IC= 6A; IB= 1.6A B VCB= 400V; IE= 0 VEB= 5V; IC= 0 IC= 1.6A; VCE= 5V IC= 8A; VCE= 5V IC= 10mA; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 1.6A; VCE= 10V pF MHz Switching Times ton tstg tf Turn-On Time Storage Time Fall Time IC= 7A; IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω 0.5 2.5 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Website：www.iscsemi.cn 2