2SC4164

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4164 DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -50~150 ℃ ℃ PW≤300μs,duty cycle≤10% Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 12 25 4 1.75 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4164 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1.6A; VCE=5V IC=8A; VCE=5V IC=10mA; VCE=5V IC=1.6A ; VCE=10V f=1MHz ; VCB=10V 15 10 10 20 160 MHz pF MIN 400 500 7 0.8 1.5 10 10 50 TYP. MAX UNIT V V V V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=2A IB2=-4A; VCC=200V RL=20Ω 0.5 2.5 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4164 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4164 4