2SC4205

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4205 DESCRIPTION ·With TO-220C package ·High voltage ;high speed APPLICATIONS ·For use in high voltage and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 400 400 7 5 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4205 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V μA μA ICBO Collector cut-off current VCB=400V ; IE=0 10 IEBO Emitter cut-off current VCE=7V ; IB=0 10 hFE DC current gain IC=3A ; VCE=5V 16 50 fT Transition frequency IC=0.5A ; VCE=10V 15 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4205 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3