2SC4231

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4231 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·High voltage ,high speed PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 2 4 1 2 30 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4231 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT ton ts tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time Storage time Fall time IC=1;IB1=0.2A; IB2=0.4A;RL=250Ω VBB2=4V At rated volatge IC=1A ; VCE=5V IC=1mA ; VCE=5V IC=0.2A ; VCE=10V 8 7 8 0.5 3.5 0.3 MHz μs μs μs 0.1 mA 0.1 mA CONDITIONS IC=0.1A;IB=0 IC=1A; IB=0.2A IC=1A ;IB=0.2A MIN 800 1.0 1.5 TYP. MAX UNIT V V V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4231 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3