2SC4233

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4233 DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Switching power transistor · PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 3 6 1 2 60 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 2.08 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4233 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=1.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.3A ; VCE=10V 8 7 8 MHz 100 μA 100 μA CONDITIONS IC=0.1A; RBE=∞ IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A MIN 800 1.0 1.5 TYP. MAX UNIT V V V Switching times ton tstg tf Turn-on time Storage time Fall time VBB2=4V; IC=1.5A IB1=0.3A;IB2=0.6A RL=170Ω 0.5 3.5 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4233 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3