INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4234
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1200 800 7 3 6 1 2 45 150 -55~150
UNIT V V V A A A A W ℃ ℃
IBM PT TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.77 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.1A; IB= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A At rated Voltage At rated Voltage At rated Voltage IC= 1.5A ; VCE= 5V IC= 1mA ; VCE= 5V IC= 0.3A ; VCE= 10V 8 7 8 MIN 800
2SC4234
TYP.
MAX
UNIT V
1.0 1.5 100 100 100
V V μA μA μA
MHz
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 1.5A , IB1= 0.3A; IB2= -0.6A RL= 170Ω; VBB2= 4V 0.5 3.5 0.3 μs μs μs
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4234
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4234
isc Website:www.iscsemi.cn
4
很抱歉,暂时无法提供与“2SC4234”相匹配的价格&库存,您可以联系我们找货
免费人工找货