2SC4247

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION ·High Current-Gain Bandwidth Product fT= 4 GHz TYP. @VCE = 10 V, IC = 10 mA ·Low Noise APPLICATIONS ·Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 15 mA PC 0.1 W TJ 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4247 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1.0 μA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 12 V hFE DC Current Gain IC= 5mA ; VCE= 10V 35 130 fT Current-Gain—Bandwidth Product IC= 10mA;VCE= 10V; f= 1000MHz 2.6 4 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 1.05 1.35 pF rbb’ • CC Base Time Constant IC= 5mA ; VCB= 10V;f= 30MHz 4.5 9 ps isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4247 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4247 isc Website：www.iscsemi.cn 4