2SC4250

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION ·High Conversion GainGce = 25 dB TYP. ·Low Reverse Transfer CapacitanceCre = 0.45 pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 25 mA PC 0.1 W TJ 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4250 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 20 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 fT Current-Gain—Bandwidth Product IC= 5mA;VCE= 10V 900 1400 MHz Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.45 0.6 pF Gce Conversion Gain VCC= 12V; f= 200MHz fL= 260MHz 20 25 dB NF Noise Figure 4.3 6 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 isc Website：www.iscsemi.cn 4