2SC4264

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4264 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 μA ICEO Collector Cutoff Current VCE= 11V; RBE= ∞ 10 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA 0.7 V hFE DC Current Gain IC= 5mA ; VCE= 10V 20 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 1.4 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.5 pF isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4264 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4264 isc Website：www.iscsemi.cn 4