2SC4274

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4274 DESCRIPTION ·With TO-220C package ·High voltage,high speed ·Low saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 10 3 40 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4274 CHARACTERISTICS Tj=25℃ unless otherwise specifie SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA ; IE=0 IC=0.2A ; IB=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V ;IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 55 TYP. MAX UNIT V V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time VCC=200V; IC=5A IB1=0.5A;IB2=-1A; RL=30Ω 1.0 2.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4274 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4274 4