2SC4276

2SC4276

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC4276 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC4276 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 15 5 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=450V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 25 MIN 400 500 10 2SC4276 TYP. MAX UNIT V V V 0.8 1.2 100 100 65 V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=7.5A;RL=20Ω IB1=0.75A; IB2=-1.5A Pw = 20μs; Duty≤2% 1.0 2.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4276 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 4
2SC4276
物料型号: - 型号为2SC4276,由Inchange Semiconductor生产。

器件简介: - 2SC4276是一款硅NPN功率晶体管,具有TO-3PN封装。 - 特点包括高电压、高速、低集电极饱和电压和高可靠性。

引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

参数特性: - 绝对最大额定值包括:集电极-基极电压(VCBO)500V,集电极-发射极电压(VCEO)400V,发射极-基极电压(VEBO)10V,集电极电流(Ic)15A,基极电流(IB)5A,集电极功耗(Pc)80W,结温(Tj)150°C,储存温度(Tstg)-55至150°C。 - 热特性包括:结到壳的热阻(Rth jc)1.56°C/W。

功能详解: - 2SC4276在25°C下的特性包括:集电极-发射极维持电压(V(BR)CEO)400V,集电极-基极击穿电压(V(BR)CBO)500V,发射极-基极击穿电压(V(BR)EBO)10V,集电极-发射极饱和电压(VcEsat)0.8V,基极-发射极饱和电压(VBEsat)1.2V,集电极截止电流(ICBO)100μA,发射极截止电流(IEBO)100μA,直流电流增益(hFE)25至65。

应用信息: - 应用领域包括开关稳压器、DC-DC转换器、固态继电器和通用功率放大器。

封装信息: - 封装类型为TO-3PN,PDF中提供了简化外形图和符号。
2SC4276 价格&库存

很抱歉,暂时无法提供与“2SC4276”相匹配的价格&库存,您可以联系我们找货

免费人工找货