INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4296
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed
APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
4
A
PC
75
W ℃
TJ
150
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4296
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; IB= 0
400
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
B
1.3
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
100
μA
hFE
DC Current Gain
IC= 6A; VCE= 4V
10
30
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
85
pF
fT
Current-Gain—Bandwidth Product
IE= -0.7A; VCE= 12V
10
MHz
Switching Times
ton
Turn-On Time IC= 6A; IB1= 0.6A; IB2= -1.2A; VCC= 200V; RL= 33Ω
1.0
μs
tstg
Storage Time
3.0
μs
tf
Fall Time
0.5
μs
isc Website:www.iscsemi.cn
2
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