2SC4297

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching APPLICATIONS 2SC4297 ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 12 24 4 75 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4297 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IC=7A;IB=1.4A IC=7A;IB=1.4A VCB=500V ;IE=0 VEB=10V; IC=0 IC=7A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz 10 10 105 MIN 400 0.5 1.3 100 100 30 MHz pF TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A;IB1=0.7A; IB2=-1.4A;RL=28.5Ω VCC=200V 1.0 3.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4297 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4297 4