2SC4308

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4308 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF wide band amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 300 mA ICM Collector Current-Peak 500 mA PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4308 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE DC Current Gain IC= 50mA ; VCE= 5V 50 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V 1.5 2.5 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 4.0 pF isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4308 isc Website：www.iscsemi.cn