2SC4368

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4368 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB B Base Current-Continuous Collector Power Dissipation @TC= 25℃ 0.5 A 20 W PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4368 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 500mA; VCE= 10V 40 140 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 35 pF fT Current-Gain—Bandwidth Product IC= 500m A; VCE= 10V 4 MHz isc Website：www.iscsemi.cn 2