2SC4369

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION ・With TO-220F package ・Complement to type 2SA1658 ・Good linearity of hFE APPLICATIONS ・For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 30 30 5 3 0.3 15 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4369 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 30 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 240 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 fT Transition frequency IC=0.5A ; VCE=2V 100 MHz hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4369 Fig.2 Outline dimensions 3