2SC4381

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 25 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4381 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V ICBO Collector Cutoff Current VCB= 150V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 0.7A ; VCE= 10V 60 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF fT Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 15 MHz Switching Times ton Turn-On Time IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω 1.0 μs tstg Storage Time 3.0 μs tf Fall Time 1.5 μs isc Website：www.iscsemi.cn 2