2SC4388

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4388 DESCRIPTION ·With TO-3PML package ·Complement to type 2SA1673 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 180 6 15 4 85 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=5 A;IB=0.5 A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 300 MIN 180 2SC4388 TYP. MAX UNIT V 2.0 10 10 180 V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V 0.50 1.80 0.60 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4388 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4388 4