INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4429
DESCRIPTION ·High Breakdown Voltage: V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Pulse
25
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃
4
A
60 W
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEX(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC=5mA; RBE=∞ IC= 4A; L=1mH, IB1=-IB2=0.8A Clamped IC=1mA; IE=0 IE=1mA; IC=0 IC= 4A; IB= 0.8A
B
2SC4429
MIN 800 800 1100 7
TYP.
MAX
UNIT V V V V
2.0 1.5 10 10 10 8 155 15 40
V V μA μA
IC= 4A; IB= 0.8A
B
VCB= 800V; IE= 0 VEB= 5V; IC= 0 IC=0.6A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0 ; VCB= 10V; ftest=1.0MHz IC= 0.6A ; VCE= 10V
pF MHz
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 6A , IB1=1.2A; IB2= -2.4A RL= 66.7Ω; VCC=400V 0.5 3.0 0.3 μs μs μs
hFE-1 Classifications K 10-20 L 15-30 M 20-40
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4429
isc Website:www.iscsemi.cn
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