2SC4430

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4430 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 12 30 6 65 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4430 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE=∞ IE=1mA; IC=0 IC=6A;IB=1.2A IC=6A;IB=1.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=0.8A ; VCE=10V VCB=10V;f=1MHz 10 8 15 215 MHz pF MIN 1100 800 7 2.0 1.5 10 10 40 TYP. MAX UNIT V V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=8A;RL=50Ω IB1=1.6A;- IB2=3.2A VCC=400V 0.5 3.0 0.3 μs μs μs hFE-1 classifications K 10-20 L 15-30 M 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4430 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4430 4