2SC4448

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4448 DESCRIPTION ・With TO-220F package ・High voltage ,high frequency APPLICATIONS ・Chroma output applications for HDTV ・Video output applications for highresolution display PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 250 250 5 150 300 50 2 W UNIT V V V mA mA mA Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4448 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat ICBO Base-emitter saturation voltage IC=50mA ;IB=5mA VCB=200V; IE=0 1.0 V μA μA Collector cut-off current 100 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE-1 DC current gain IC=10mA ; VCE=10V 40 200 hFE-2 DC current gain IC=100mA ; VCE=10V 20 fT Transition frequency IC=40mA ; VCE=10V 240 MHz COB Collector output capacitance f=1MHz;VCB=30V 3.3 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4448 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4448 4