2SC4466

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4466 DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1693 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=-0.5A ; VCE=12V 50 110 20 MIN 80 TYP. 2SC4466 MAX UNIT V 1.5 10 10 180 V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;RL=10Ω IB1=- IB2=0.3A VCC=30V 0.16 2.60 0.34 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4466 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4466 4