2SC4508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4508 DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High speed switching performance APPLICATIONS ・For switching regulator and general purpose power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4508 MAX UNIT VCEO(SUS) Collector-emitter sustainig voltage IC=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 25 65 hFE-2 DC current gain IC=4A ; VCE=5V 20 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4508 Fig.2 Outline dimensions 3