2SC4510

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertors ・Solid state relay ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 15 5 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA; IE=0 IC=0.2A; IB=0 IE=1mA; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=450V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 65 TYP. MAX UNIT V V V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7.5A;RL=20Ω IB1=0.75A; IB2=-1.5A Pw = 20μs; Duty≤2% 1.0 2.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4510 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4510 4