2SC4512

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 DESCRIPTION ・With TO-220C package ・Complement to type 2SA1726 APPLICATIONS ・Audio and General Purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collertor output capacitance Transition frequency CONDITIONS IC=25mA; RBE=∞ IC=5A; IB=0.2A VCB=120V ;IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V f=1MHz; VCB=10V IE=-0.5A ; VCE=12V 50 110 20 pF MHz MIN 80 0.5 10 10 TYP. MAX UNIT V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time VCC=30V; IC=3A IB1=-IB2=0.3A RL=10Ω 0.16 2.60 0.34 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4512 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 4