2SC4517A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A DESCRIPTION ・With TO-220F package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC4517 VCBO Collector-base voltage 2SC4517A VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 1000 550 7 3 6 1.5 30 150 -55~150 V V A A A W ℃ ℃ CONDITIONS VALUE 900 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.25A ; VCE=12V 2SC4517 2SC4517A MIN 550 TYP. MAX UNIT V 0.5 1.2 100 100 10 35 6 30 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.0A IB1=0.15A IB2=-0.45A VCC=250V ,RL=250Ω 0.7 4.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4517 2SC4517A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4517 2SC4517A 4