2SC4518A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A DESCRIPTION ・With TO-220F package ・High voltage switching transistor APPLICATIONS ・For switching regulator ;lighting inverter and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC4518 VCBO Collector-base voltage 2SC4518A VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 1000 550 7 5 10 2.5 35 150 -55~150 V V A A A W ℃ ℃ CONDITIONS VALUE 900 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC=0 IC=1.8A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.35A ; VCE=12V 2SC4518 2SC4518A MIN 550 TYP. MAX UNIT V 0.5 1.2 100 100 10 50 6 25 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.8A; IB1=0.27A IB2=-0.9A VCC=250V ,RL=139Ω 0.7 4.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4518 2SC4518A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4518 2SC4518A 4