2SC4537

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION ·Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 50 mA PC 0.1 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4537 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 15 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 1.0 μA ICEO Collector Cutoff Current VCE= 10V; IE= ∞ 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 50 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 4.5 6.0 GHz COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 1.0 1.5 pF PG Power Gain IC= 20mA ; VCE= 5V; f= 900MHz 10 dB NF Noise Figure IC= 5mA ; VCE= 5V;f= 900MHz 1.6 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4537 isc Website：www.iscsemi.cn