2SC4542

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak 20 A IB B Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4542 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; I IB= 0 600 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 210 pF Switching Times tstg Storage Time ICP= 7A , IB1= 1.4A; IB2= -2.8A; RL= 28.5Ω 1.8 2.5 μs tf Fall Time 0.1 0.2 μs isc Website：www.iscsemi.cn 2