2SC4546

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4546 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 30 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4546 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.3 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 3A; VCE= 4V 10 25 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 55 pF fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 10 MHz Switching Times ton Turn-On Time IC= 3A; IB1= 0.6A; IB2= -1.2A; VCC= 200V; RL= 67Ω 0.5 μs tstg Storage Time 2.0 μs tf Fall Time 0.15 μs isc Website：www.iscsemi.cn 2