2SC4550

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4550 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage: VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) B APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25℃ VALUE 100 60 7.0 7.0 14 3.5 30 UNIT V V V A A A PT Total Power Dissipation @Ta=25℃ TJ Tstg Junction Temperature Storage Temperature 2.0 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 4.0A ; IB= 0.4A, L= 1mH IC= 4.0A ; IB1= -IB2= 0.4A, VBE(OFF)=-1.5V, L=180μH,clamped IC= 4A; IB= 0.2A B 2SC4550 MIN 60 60 TYP. MAX UNIT V V 0.3 0.5 1.2 1.5 10 1.0 10 1.0 10 100 100 60 100 150 400 V V V V μA mA μA mA μA IC= 6A; IB= 0.3A B IC= 4A; IB= 0.2A B IC= 6A; IB= 0.3A B VCB= 60V ; IE= 0 VCE= 60V ; RBE= 50Ω,Ta=125℃ VCE= 60V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V,Ta=125℃ VEB= 5V; IC= 0 IC= 0.7A ; VCE= 2V IC= 1.5A ; VCE= 2V IC= 4.0A ; VCE= 2V IE= 0 ; VCB= 10V; f= 1.0MHz IC= 1A ; VCE= 10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 4.0A ,RL= 12.5Ω, IB1= -IB2= 0.2A,VCC≈ 50V 0.3 1.5 0.3 μs μs μs hFE-2 Classifications M 100-200 L 150-300 K 200-400 isc Website：www.iscsemi.cn 2