2SC4557

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4557 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 550 7 10 20 5 80 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4557 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE=∞ IC=5A;IB=1A IC=5A;IB=1A VCB=800V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz 10 6 105 MIN 550 0.5 1.2 100 100 28 MHz pF TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A;IB1=0.75A; IB2=-1.5A; RL=50Ω VCC=250V 1.0 5.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4557 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4557 4