2SC4559

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4559 · Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3 40 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 10 8 MIN 400 2SC4559 TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA 5.5 MHz Switching times Turn-on time Storage time Fall time IC=3A; IB1=0.6A IB2=-1.2A;VCC=150V 1.0 3.0 0.3 μs μs μs ton ts tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4559 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4559 4