2SC4580

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEX VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage VEB= 5V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 450 600 7 8 16 4 8 50 150 -55~150 UNIT V V V V A A A A W ℃ ℃ IBM PT TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A; IB= 0 IC= 4A; IB= 0.8A B 2SC4580 MIN 450 TYP. MAX UNIT V 1.0 1.5 100 100 100 10 5 20 V V μA μA μA IC= 4A; IB= 0.8A B At rated Voltage At rated Voltage At rated Voltage IC= 4A; VCE= 5V IC= 1mA; VCE= 5V IC= 0.8A; VCE= 10V MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 37.5Ω; VBB2= 4V 0.5 2.0 0.2 μs μs μs isc Website：www.iscsemi.cn 2