2SC4582

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 15 30 6 12 75 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICEO hFE-1 hFE-2 fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current At rated voltage Collector cut-off current DC current gain DC current gain Transition frequency IC=7.5 A ; VCE=5V IC=1mA ; VCE=5V IC=1.5A ; VCE=10V 10 5 20 MHz 0.1 mA CONDITIONS IC=7.5A;IB=1.5 A IC=7.5A;IB=1.5 A IC=0.2A;IB=0 At rated voltage 450 0.1 MIN TYP. MAX 1.0 1.5 UNIT V V V mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7.5A;RL=20Ω IB1=1.5A; IB2=3A VBB2=4V 0.5 2.0 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4582 Fig.2 Outline dimensions 3